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CM200DU-24F - IGBT Power module - MITSUBISHI
CM200DU-24F - IGBT Power module - MITSUBISHI
CM200DU-24F - IGBT Power module - MITSUBISHI
CM200DU-24F - IGBT Power module - MITSUBISHI
CM200DU-24F - IGBT Power module - MITSUBISHI
CM200DU-24F - IGBT Power module - MITSUBISHI
CM200DU-24F - IGBT Power module - MITSUBISHI
CM200DU-24F - IGBT Power module - MITSUBISHI

CM200DU-24F - IGBT Power module - MITSUBISHI

CM200DU-24F

This MITSUBISHI power module reference CM200DU-24F is part of the range F SERIES MITSUBISHI

CM200DU-24F : 1200V, 200A, 830W, Isolated Type, High Power Switching

This power module CM200DU-24F is at your disposal in supply to replace your defective module and has a guarantee adapted to your needs.

New power module.

In stock, ready to ship.
State
  • New Supply
Warranty
€132.00
VAT excluded

System options

Exchange service with a refurbished unit

Standard Exchange Service

Reconditioned and tested systems

From 6 to 12
month warranty

Exchange service with a new unit

Standard Exchange Service

New systems

From 12 to 24
month warranty

Supply of a refurbished unit

Supply Service

Reconditioned and tested systems

From 6 to 12
month warranty

Supply of a new unit

Supply Service

New systems

From 12 to 24
month warranty

For parts only

Supply Service

Sold for parts – no warranty

Repair

Repair service

Repair will be made to damaged and defectiv units

From 3 to 18
month warranty

Livraison rapide

Fast
delivery

Livraison rapide

guaranteed
products

Livraison rapide

Secure
payment

 

Mitsubishis new F-series IGBTs represent a significant advance over previous IGBT generations in terms of total power losses.

The device remains fundamentally the same as a conventional IGBT, and the advice given in the application notes General Considerations for IGBT and Intelligent Power Modules and Using IGBT Modules should be observed.

However the use of a trenchgate structure, and an integrated short circuit current control circuit, mean that there are sufficient differences in characteristics and behaviour to warrant further explanation.

Since the IGBTs introduction, successive generations of IGBT technology have featured steady improvements in onstate voltage and switching losses. However, improving the performance of existing IGBT technology has become increasingly difficult due to the constraints of the planar IGBT structure. The limitations of the planar IGBT arise partly from the resistance of the JFET region between adjacent cells in the MOSFET portion of the device, and partly from the forward voltage VF of the diode structure in the bipolar portion of the device. F-series IGBTs overcome the
first constraint by utilising a trench gate structure, in which the gate oxide and conductive polysilicon gate electrode are formed in a deep narrow trench below the chip surface. The second limitation is addressed by using a new proton irradiation process.

Height
4 cm / 1,5 in
Width
6 cm / 2,3 in
Length
11 cm / 4,3 in
Weight
0,4 kg / 0,8 lb
Family
MITSUBISHI - F SERIES
Reference
CM200DU-24F
New product
3006952420405
300678347866

Japanese industrial group of international reputation, present in 34 countries on 5 continents, Mitsubishi Electric is a world leader in the production and sale of electrical and electronic equipment.

Mitsubishi Electric has been present in France as an autonomous legal entity since 1975 to promote the sale of Mitsubishi Electric Group products adapted to the French market. Their company, a subsidiary of a group known worldwide for the high technology and quality of its products, has since its establishment a significant growth. Over the years, it has introduced several new product lines and now markets around 8 major product families.

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